MT41K512M8V80AWC1 IC DRAM 4GBIT PARALLEL DIE
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MT41K512M8V80AWC1
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MT41K512M8V80AWC1 IC DRAM 4GBIT PARALLEL DIE

Brand:Micron
Model:MT41K512M8V80AWC1
stock:12965
Store:ShenZhen/Hongkong
DataSheet: Search
Price: The market price fluctuates. Please consult the customer service for the actual price
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product details
Common problem
Industry trends
Memory format DRAM
Installation type -
packing bulk
series -
Part status On sale
Memory type Volatile
storage capacity 4Gb(512M x 8)
Voltage - Supply 1.283V ~ 1.45V
working temperature 0°C ~ 95°C(TC)
Memory interface Paralleling
Clock frequency -
Access time -
Access time -
Encapsulation/Housing -
Country of origin China/USA/Japan, etc
Warehouse China/Hong Kong
quality Original genuine
technology DDR3L
Random read -
DWPD -
Current - maximum -
Flash architecture -
Common problem
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